Overview:

Memristoris abbreviated as memristor, and represented by the symbol   symbol M . Together with resistors R, capacitors C, and inductors L, memristors constitute four basic passive circuit  components. It is the fundamental component that relates magnetic flux and electric  charge. It combines both resistance and storage properties, representing a new  generation of high-speed memory cells, and is commonly known as  Resistive Random Access Memory (RRAM).

The major application fields that have drawn much attention to memristors include: Non-volatile Memory (Nonvolatile memory), Logic Operation (Logic computing),  and Brain-inspired Neuromorphic Computing  (Brain-inspired neuromorphic computing) and others. These three distinct yet interconnected technical routes lay a foundation for developing anovel computing architecture that integrates information storage and processing, and breaks through the traditional von • Neumann architecture bottleneck, providing a feasible approach.

While continuous achievements have been made in memristor research, multi-functional coupling devices based on memristors have also become a research hotspot among researchers. These new coupling devices include: magnetic coupling devices, optical coupling devices, superconducting coupling devices, phase-change memristive devices, ferroelectric coupling devices, etc.

Basic Research and Testing of Memristors

Memristor research can be divided into basic research, performance research and integration research three stages,  this research method is applicable to Resistive Random Access Memory (RRAM), Phase Change Memory (PCM) and Ferroelectric Random Access Memory (FeRAM) , all of them.

In the basic research stage of memristors, the main research focuses on the material system and physical mechanism of memristors, as well as characterizing the parameters of memristors and classifying memristors through pinched hysteresis loops.

Basic research tests on memristors include:DC characteristics, AC characteristics and pulse characteristic testing.

MemristorDC Characteristics measurement is usually combined with Forming  process.  It mainly measures the DC V-I curves of memristors, and calculates key parameters of memristors based on the curves, including SET/ RESET voltage/current, HRS, LRS and other important parameters. It supports unidirectional and bidirectional scanning. 

MemristorAC Characteristics mainly conducts testing of hysteresis loops, and hysteresis loops are the key to identifying memristor types. 

MemristorPulse Testing can effectively reduce the influence of Joule heat accumulated during DC testing. Meanwhile, it can also be used to study the effect of heat on device performance. As memristor characterization technology is developing towards extreme conditions, the demand for picosecond pulse switching and signal capture is increasingly strong.    

Tektronix Memristor Basic Research Test Solution

Cost-Effective Test Solution

Tektronix Solution Advantages :

•  Multiple configuration options to meet different customer requirements

• Tektronix China has a local R&D team to meet customers' customized test requirements

• Complete hardware system integration provided by Tektronix partners

•  Tektronix test solutions are adopted by many leading memristor R&D institutions